Low-temperature grown GaAsSb with sub-picosecond photocarrier lifetime for continuous-wave terahertz measurements Article

Sigmund, J, Lampin, JF, Ivannikov, V et al. (2008). Low-temperature grown GaAsSb with sub-picosecond photocarrier lifetime for continuous-wave terahertz measurements . E91-C(7), 1058-1062. 10.1093/ietele/e91-c.7.1058

cited authors

  • Sigmund, J; Lampin, JF; Ivannikov, V; Sydlo, C; Feiginov, M; Pavlidis, D; Meissner, P; Hartnagel, HL

authors

abstract

  • We report on continuous-wave optoelectronic terahertz (THz) measurements using low-temperature grown (LTG) GaAsSb as photomixer material. A broadband log-periodic antenna and a six interdigital finger photomixer with 1 μm gap is fabricated on LTG-GaAsSb for THz generation and detection. At 0.37 THz, the resonance frequency of the inner most antenna tooth, we obtained a power of 6.3 nW. A Golay cell was used as detector. The photocarrier lifetime of the material was determined to be 700 fs by pump-probe experiments with an optical wavelength close to the band gap of LTG-GaAsSb. The band gap was 1.0 eV, measured by wavelength dependent pump-probe measurements. Copyright © 2008 The Institute of Electronics, Information and Communication Engineers.

publication date

  • January 1, 2008

Digital Object Identifier (DOI)

start page

  • 1058

end page

  • 1062

volume

  • E91-C

issue

  • 7