Quantum-size resonance tunneling in the field emission phenomenon
Article
Litovchenko, V, Evtukh, A, Kryuchenko, Y et al. (2004). Quantum-size resonance tunneling in the field emission phenomenon
. JOURNAL OF APPLIED PHYSICS, 96(1), 867-877. 10.1063/1.1760234
Litovchenko, V, Evtukh, A, Kryuchenko, Y et al. (2004). Quantum-size resonance tunneling in the field emission phenomenon
. JOURNAL OF APPLIED PHYSICS, 96(1), 867-877. 10.1063/1.1760234
The effects of resonance tunneling in the field-emission processes through quantum-size structure were analyzed. The one-side double-barrier structures and two-side barrier structures, in which ultrathin quantized layers were embedded in the tunneling transparent dielectrics were used. It was found that the separate electron energy levels in the quantum well induced resonance tunneling and this leads to peaks in the electron field-emission current-voltage characteristics. The presented phenomena can be used to design the device structure for the increase of resonance current peaks and to obtain a monochromatic electron current and high-frequency current fluctuations.
