Monolithically integrated planar front-end photoreceivers with 0.25µm gate pseudomorphic in0.60Ga0.40As/In0.52AI0.48As/InP modulation-doped field-effect transistors Article

Lai, R, Bhattacharya, PK, Pavlidis, D et al. (1991). Monolithically integrated planar front-end photoreceivers with 0.25µm gate pseudomorphic in0.60Ga0.40As/In0.52AI0.48As/InP modulation-doped field-effect transistors . ELECTRONICS LETTERS, 27(4), 364-366. 10.1049/el:19910230

cited authors

  • Lai, R; Bhattacharya, PK; Pavlidis, D; Brock, T

authors

abstract

  • Monolithically InP-based pin-MODFET front-end photore ceivers realised by molecular beam epitaxial regrowth have been characterised. The FWHM of the temporal response to photoexcitation for the full circuit was 60 ps which translates to a bandwidth of approximately 6.5 GHz. The measured electrical 3 dB frequency response of the circuit with an effective input load resistance of 33 O is 15.0 GHz. The per formance of the pin-MODFET photoreceiver circuit is comparable to the best hybrid circuits with InP-based devices. © 1991, The Institution of Electrical Engineers. All rights reserved.

publication date

  • February 14, 1991

published in

Digital Object Identifier (DOI)

start page

  • 364

end page

  • 366

volume

  • 27

issue

  • 4