Fast and ultrafast processes in AlGaN/GaN channels Conference

Matulionis, A, Liberis, J, Ardaravičius, L et al. (2002). Fast and ultrafast processes in AlGaN/GaN channels . PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 234(3), 826-829. 10.1002/1521-3951(200212)234:3<826::AID-PSSB826>3.0.CO;2-4

cited authors

  • Matulionis, A; Liberis, J; Ardaravičius, L; Ramonas, M; Zubkute, T; Matulioniene, I; Eastman, LF; Shealy, JR; Smart, J; Pavlidis, D; Hubbard, S

authors

abstract

  • Extrapolated experimental dependence of electron energy relaxation time is used to treat hotelectron sharing by the adjacent Al0.15Ga0.85N and GaN layers in Al0.15Ga0.85N/GaN. The results fit the available experimental data on microwave noise when hot-phonon effect on the energy relaxation time is taken into account. The relaxation time of the occupancy fluctuations of the shared states is estimated to be 6 ps at 80 K lattice temperature.

publication date

  • December 1, 2002

published in

start page

  • 826

end page

  • 829

volume

  • 234

issue

  • 3