Analysis of InP/InGaAs single and double heterostructure bipolar transistors for simultaneous high speed and high breakdown operation
Conference
Chau, HF, Pavlidis, D, Hu, J et al. (1992). Analysis of InP/InGaAs single and double heterostructure bipolar transistors for simultaneous high speed and high breakdown operation
. 410-413. 10.1109/ICIPRM.1992.235577
Chau, HF, Pavlidis, D, Hu, J et al. (1992). Analysis of InP/InGaAs single and double heterostructure bipolar transistors for simultaneous high speed and high breakdown operation
. 410-413. 10.1109/ICIPRM.1992.235577
InP/InGaAs Heterostructure Bipolar Transistors (HBT's) have demonstrated excellent microwave characteristics [1] and enhanced performance using a p- [2] and an i-δp+ collector [3]. In contrast to AlGaAs/GaAs HBT's, however, InP/InGaAs devices show in general low breakdown voltages due to the small bandgap energy of the InGaAs collector. This paper presents InP/InGaAs HBT characteristics with different collector materials and doping profiles in view of high breakdown operation and possibly high speed characteristics.
