Power characteristics of AlN/GaN MISFETs on sapphire substrate Article

Seo, S, Zhao, GY, Pavlidis, D. (2008). Power characteristics of AlN/GaN MISFETs on sapphire substrate . ELECTRONICS LETTERS, 44(3), 244-245. 10.1049/el:20083261

cited authors

  • Seo, S; Zhao, GY; Pavlidis, D

authors

abstract

  • AlN/GaN metal insulator semiconductor field effect transistors (MISFETs) on a sapphire substrate with 5nm AlN barrier layer were fabricated using a simple wet-etching technique. Fabricated AlN/GaN MISFETs with 1m gate length and 200m gate width showed a maximum drain current density of 380mA/mm and a peak extrinsic transconductance of 85mS/mm. Power characteristics were measured at 2GHz and showed an output power density of 850mW/mm with 23.8 PAE and 13.1dB linear gain at a drain bias of 15V. © The Institution of Engineering and Technology 2008.

publication date

  • February 7, 2008

published in

Digital Object Identifier (DOI)

start page

  • 244

end page

  • 245

volume

  • 44

issue

  • 3