Monochromatic electron-emission from planar AlN/GaN multilayers with carbon nanotube gate electrode Article

Yilmazoglu, O, Considine, L, Joshi, R et al. (2012). Monochromatic electron-emission from planar AlN/GaN multilayers with carbon nanotube gate electrode . Journal of Vacuum Science and Technology B, 30(4), 10.1116/1.4732117

cited authors

  • Yilmazoglu, O; Considine, L; Joshi, R; Mimura, H; Pavlidis, D; Hartnagel, HL; Schneider, JJ; Evtukh, A; Semenenko, M; Litovchenko, V

abstract

  • Polarized multilayer AlN/GaN heterostructures were grown, processed and characterized for resonant electron emission. Diodes of this type have extremely high resonant tunneling voltages of >5 V, which is important for a vacuum independent (up to atmosphere) electron emission over the surface vacuum barrier at ultralow bias voltages. The surface gate electrode consists of laterally oriented conductive carbon nanotubes with large effective open areas. Monochromatic electron emission can find applications in technology such as high-resolution electron microscopy, electron beam lithography, and a number of high-performance vacuum microelectronic devices. © 2012 American Vacuum Society.

authors

publication date

  • January 1, 2012

published in

Digital Object Identifier (DOI)

volume

  • 30

issue

  • 4