We present a novel on-chip implementation of a traveling wave tube amplifier on GaN/AlGaN heterostructure. The device utilizes the coupling between drifting electrons in a two-dimensional electron gas (2DEG) substrate layer and that of an electromagnetic (EM) slow-wave circuit placed on top of the 2DEG to achieve amplification. Measurements are presented for validation. The applied voltage was 8 V and the gain was 2.3 dB at 80 GHz.
