AIN/GaN MISFET for high frequency applications: Physical simulation and experimental evaluation Conference

Seo, S, Ghose, K, Pavlidis, D et al. (2007). AIN/GaN MISFET for high frequency applications: Physical simulation and experimental evaluation . 219-222. 10.1109/EMICC.2007.4412688

cited authors

  • Seo, S; Ghose, K; Pavlidis, D; Schmidt, S

authors

abstract

  • AIN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) were designed, simulated and fabricated. DC and S-parameter measurements were also performed. Drift-diffusion simulations using DESSIS compared AIN/GaN MISFETs and Al32Ga68N/GaN Heterostructure FETs (HFETs) with the same geometries. The simulation results show the advantages of AIN/GaN MISFETs in terms of higher saturation current, lower gate leakage and higher transconductance than AlGaN HFETs. First results from fabricated AIN/GaN devices with 1.1 μm gate length and 200 μm gate width showed a maximum drain current density of ∼470 mA/mm and a peak extrinsic transconductance of 80 mS/mm. S-parameter measurements showed that the current-gain cutoff frequency (fT) and maximum oscillation frequency (fmax) were 2.8 GHz and 10.3 GHz, respectively. To the authors knowledge this is the first report of a systematic study of AIN/GaN MISFETs addressing their physical modeling and experimental high-frequency characteristics. © 2007 EuMA.

publication date

  • December 1, 2007

Digital Object Identifier (DOI)

start page

  • 219

end page

  • 222