AIN/GaN metal insulator semiconductor field effect transistor on sapphire substrate Article

Seo, S, Ghose, K, Zhao, GY et al. (2008). AIN/GaN metal insulator semiconductor field effect transistor on sapphire substrate . E91-C(7), 994-1000. 10.1093/ietele/e91-c.7.994

cited authors

  • Seo, S; Ghose, K; Zhao, GY; Pavlidis, D

authors

abstract

  • AIN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) were designed, simulated and fabricated. DC, S-parameter and power measurements were also performed. Drift- diffusion simulations using DESSIS compared AIN/GaN MISFETs and Al32Ga68N/GaN Heterostructure FETs (HFETs) with the same geometries. The simulation results show the advantages of AIN/GaN MISFETs in terms of higher saturation current, lower gate leakage and higher transconduc- tance than AlGaN/GaN HFETs. First results from fabricated AIN/GaN devices with 1/μm gate length and 200μm gate width showed a maximum drain current density of ∼380 mA/mm and a peak extrinsic transcon- ductance of 85 mS/mm. S-parameter measurements showed that current- gain cutoff frequency (fT) and maximum oscillation frequency (fmax) were 5.85 GHz and 10.57 GHz, respectively. Power characteristics were measured at 2 GHz and showed output power density of 850mW/mm with 23.8% PAE at VDs = 15 V. To the authors knowledge this is the first report of a systematic study of AIN/GaN MISFETs addressing their physical modeling and experimental high-frequency characteristics including the power performance. Copyright © 2008 The Institute of Electronics, Information and Communication Engineers.

publication date

  • January 1, 2008

Digital Object Identifier (DOI)

start page

  • 994

end page

  • 1000

volume

  • E91-C

issue

  • 7