Heterojunction bipolar transistor large-signal model for high power microwave applications Conference

Samelis, A, Pavlidis, D. (1995). Heterojunction bipolar transistor large-signal model for high power microwave applications . IEEE MTT-S International Microwave Symposium Digest, 3 1231-1234.

cited authors

  • Samelis, A; Pavlidis, D

abstract

  • A large-signal model is presented for HBT's. The model accounts for self-heating effects and is based on the Gummel-Poon formulation. Full model compatibility with the commercially available software package LIBRA is ensured. The model incorporates temperature dependence for most of its parameters and has been employed for the analysis of the DC and microwave power characteristics of AlGaAs/GaAs HBT's. Good agreement between simulated and directly measured DC and microwave characteristics support the validity of the model.

authors

publication date

  • January 1, 1995

published in

start page

  • 1231

end page

  • 1234

volume

  • 3