A novel method to form conducting channels in SiOx(Si) films for field emission application Article

Semenenko, M, Evtukh, A, Yilmazoglu, O et al. (2010). A novel method to form conducting channels in SiOx(Si) films for field emission application . JOURNAL OF APPLIED PHYSICS, 107(1), 10.1063/1.3273394

cited authors

  • Semenenko, M; Evtukh, A; Yilmazoglu, O; Hartnagel, HL; Pavlidis, D

authors

abstract

  • The electrical and field emission properties of SiOx(Si) films are studied. SiOx(Si) films of 40-100 nm thick are obtained by plasma-enhanced chemical vapor deposition and thermal evaporation of Si powder onto Si substrates. Nanosized electrical conducting channels are formed in SiOx(Si) films by electrical conditioning at high current densities. The structures with conducting channels demonstrate increased field emission current and decreased threshold voltage compared to as-deposited SiO x(Si) films. The decrease in threshold voltage for electron field emission is explained by local enhancement of electric field. The diameters of conducting channels are estimated from the effective emission area to be in the range of 1-2 nm. © 2010 American Institute of Physics.

publication date

  • February 5, 2010

published in

Digital Object Identifier (DOI)

volume

  • 107

issue

  • 1