High-Performance Monolithic PINMODFET Transimpedance Photoreceiver Article

Gutierrez Aitken, AL, Bhattacharya, P, Chen, YC et al. (1993). High-Performance Monolithic PINMODFET Transimpedance Photoreceiver . IEEE PHOTONICS TECHNOLOGY LETTERS, 5(8), 913-915. 10.1109/68.238252

cited authors

  • Gutierrez Aitken, AL; Bhattacharya, P; Chen, YC; Pavlidis, D; Brock, T


  • The performance characteristics of a transimnedance photoreceiver using an InOS3Ga047As p-i-n photodiode integrated with a O.1-Am gate length regrown pseudomorphic Ino.6oGa040As MODFET grown by MBE have been investigated. The regrown MODFET's have extrinsic transconductance values as high as 610 mS/mm and channel currents up to 350 inA/mm at a drain bias of 1.5 V. The measured temporal response of the photoreceiver exhibits a FWHM value of 90 ps, which indicates a bandwidth of ~ 6 GHz and expected 10-Gb/s operation. The transimpedance gain was as high as 55 dBll with an 800-11 feedback resistor. © 1993 IEEE.

publication date

  • January 1, 1993

published in

Digital Object Identifier (DOI)

start page

  • 913

end page

  • 915


  • 5


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