Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors
Article
Razeghi, M, Omnes, F, Maurel, P et al. (1991). Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors
. 6(2), 103-107. 10.1088/0268-1242/6/2/006
Razeghi, M, Omnes, F, Maurel, P et al. (1991). Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors
. 6(2), 103-107. 10.1088/0268-1242/6/2/006
The authors report the fabrication of n-type GaInP/GaxIn 1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional gas field-effect transistors grown by low-pressure metallorganic chemical vapour deposition on GaAs semi-insulating substrates. The GaAs-GaInP devices demonstrate excellent operational performance at low temperature, due to the absence of deep traps in doped GaInP layers. The extrinsic transconductance is 163 mS mm-1 at 300 K and 213 mS mm-1 at 77 K. The threshold voltage of the devices biased in the dark at Vds=3 V was -3.34 V at 300 K and -3.38 at 77 K. Microwave measurements revealed cut-off frequencies fT of 17.8 GHz and fMAX of 23.5 GHz.
