A self-aligned GaInP/GaAs HBT technology was used to develop a monolithic high-gain transimpedance amplifier suitable for optical communication receivers. On-wafer probe measurements revealed a gain (S21) of 18.8 dB with a bandwidth of 13.5 GHz and input, output matching better than -8 dB. The amplifier showed a sensitivity of -15 dBm for 10 Gb/s NRZ 27-1 pseudo-random bit sequence with a BER of 10-9. The noise figure of the amplifier was better than 7.5 dB over the bandwidth of operation.