High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers Conference

Mohammadi, S, Park, JW, Pavlidis, D et al. (1998). High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers . 661-664.

cited authors

  • Mohammadi, S; Park, JW; Pavlidis, D; Dua, C; Guyaux, JL; Garcia, JC

authors

abstract

  • A self-aligned GaInP/GaAs HBT technology was used to develop a monolithic high-gain transimpedance amplifier suitable for optical communication receivers. On-wafer probe measurements revealed a gain (S21) of 18.8 dB with a bandwidth of 13.5 GHz and input, output matching better than -8 dB. The amplifier showed a sensitivity of -15 dBm for 10 Gb/s NRZ 27-1 pseudo-random bit sequence with a BER of 10-9. The noise figure of the amplifier was better than 7.5 dB over the bandwidth of operation.

publication date

  • December 1, 1998

start page

  • 661

end page

  • 664