Wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier Article

Seo, S, Pavlidis, D, Moon, JS. (2005). Wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier . Electronics Letters, 41(16), 909-911. 10.1049/el:20051461

cited authors

  • Seo, S; Pavlidis, D; Moon, JS

abstract

  • A 3-16 GHz wideband AlGaN/GaN high electron mobility transistor (HEMT) low noise amplifier (LNA) on silicon carbide substrate, using balanced configuration with a coplanar waveguide Lange coupler, is designed and fabricated. This LNA shows a minimum noise figure of 4 dB with associated gain of 20 dB with gain flatness of ±3 dB across the 3-16 GHz frequency range. The output third order intercept point of 38 dBm is achieved at 8 GHz. © IEE 2005.

authors

publication date

  • August 4, 2005

published in

Digital Object Identifier (DOI)

start page

  • 909

end page

  • 911

volume

  • 41

issue

  • 16