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First InP/GaAsSb/InP DHBT Ka-band MMIC oscillator
Conference
Zhu, X, Wang, J, Pavlidis, D. (2006). First InP/GaAsSb/InP DHBT Ka-band MMIC oscillator .
153-156. 10.1109/EMICC.2006.282774
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Zhu, X, Wang, J, Pavlidis, D. (2006). First InP/GaAsSb/InP DHBT Ka-band MMIC oscillator .
153-156. 10.1109/EMICC.2006.282774
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cited authors
Zhu, X; Wang, J; Pavlidis, D
authors
Pavlidis, Dimitrios
abstract
The demonstration of the first MMIC oscillator using novel InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) is presented. The oscillator delivered an output power of 3.2 dBm at 34.9GHz with DC to RF conversion efficiency of 10.9%. The corresponding phase noise at IMHz offset from the carrier frequency was -92dBc/Hz. © 2006 EuMA.
publication date
January 1, 2006
Identifiers
Digital Object Identifier (DOI)
https://doi.org/10.1109/emicc.2006.282774
Additional Document Info
start page
153
end page
156