First InP/GaAsSb/InP DHBT Ka-band MMIC oscillator Conference

Zhu, X, Wang, J, Pavlidis, D. (2006). First InP/GaAsSb/InP DHBT Ka-band MMIC oscillator . 153-156. 10.1109/EMICC.2006.282774

cited authors

  • Zhu, X; Wang, J; Pavlidis, D

authors

abstract

  • The demonstration of the first MMIC oscillator using novel InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) is presented. The oscillator delivered an output power of 3.2 dBm at 34.9GHz with DC to RF conversion efficiency of 10.9%. The corresponding phase noise at IMHz offset from the carrier frequency was -92dBc/Hz. © 2006 EuMA.

publication date

  • January 1, 2006

Digital Object Identifier (DOI)

International Standard Book Number (ISBN) 10

International Standard Book Number (ISBN) 13

start page

  • 153

end page

  • 156