High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure metal-organic chemical vapour deposition
Article
Razeghi, M, Omnes, F, Defour, M et al. (1990). High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure metal-organic chemical vapour deposition
. 5(3), 278-280. 10.1088/0268-1242/5/3/017
Razeghi, M, Omnes, F, Defour, M et al. (1990). High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure metal-organic chemical vapour deposition
. 5(3), 278-280. 10.1088/0268-1242/5/3/017
The authors report the fabrication of high-quality GaAs/GaInP n-p-n heterojunction bipolar transistors grown by low-pressure metal-organic chemical vapour deposition on semi-insulating substrates. Various structures with homogeneous and graded bases have been fabricated. Doping profiles together with X-ray double diffraction patterns demonstrate the excellent control of growth parameters such as thicknesses, doping levels and interface quality. The static characteristics of the devices show current gains as high as 400, which is the highest value reported in that system.
