Determination of satellite valley position in GaN emitter from photoexcited field emission investigations Article

Semenenko, M, Yilmazoglu, O, Hartnagel, HL et al. (2011). Determination of satellite valley position in GaN emitter from photoexcited field emission investigations . JOURNAL OF APPLIED PHYSICS, 109(2), 10.1063/1.3533770

cited authors

  • Semenenko, M; Yilmazoglu, O; Hartnagel, HL; Pavlidis, D

authors

abstract

  • Argon plasma etched GaN field-emitter rods with nanometer-scale diameter were fabricated on GaN grown on an n+ -GaN substrate. Their electron field emission properties were investigated both without and under illumination by using light sources with various wavelengths. The Fowler-Nordheim current-voltage characteristics of the cathodes show a change in slope for illuminated cathodes. The electron affinity difference ΔE between the different valleys in the conduction band has been ascertained and is in the range from 1.18 up to 1.21 eV. © 2011 American Institute of Physics.

publication date

  • January 15, 2011

published in

Digital Object Identifier (DOI)

volume

  • 109

issue

  • 2