A 100-GHz Monolithic Cascode InAlAs/InGaAs HEMT Oscillator Article

Kwon, Y, Pavlidis, D, Marsh, P et al. (1994). A 100-GHz Monolithic Cascode InAlAs/InGaAs HEMT Oscillator . IEEE Microwave and Wireless Components Letters, 4(5), 135-137. 10.1109/75.289518

cited authors

  • Kwon, Y; Pavlidis, D; Marsh, P; Brock, T; Streit, DC

abstract

  • The design, fabrication, and experimental characteristics of a 100-GHz monolithic cascode HEMT oscillator are presented. A cascode pair of InAIAs/InGaAs HEMT’s has been used as the active cell to enhance the negative resistance so that more process tolerance can be achieved. The monolithic circuit oscillates around 100 GHz with an output power of 2 dBm at a drain bias voltage as small as 0.9 V. This is the first demonstration of cascode HEMT oscillators at W-band. © 1994 IEEE

authors

publication date

  • January 1, 1994

published in

Digital Object Identifier (DOI)

start page

  • 135

end page

  • 137

volume

  • 4

issue

  • 5