A 100-GHz Monolithic Cascode InAlAs/InGaAs HEMT Oscillator Article

Kwon, Y, Pavlidis, D, Marsh, P et al. (1994). A 100-GHz Monolithic Cascode InAlAs/InGaAs HEMT Oscillator . 4(5), 135-137. 10.1109/75.289518

cited authors

  • Kwon, Y; Pavlidis, D; Marsh, P; Brock, T; Streit, DC

authors

abstract

  • The design, fabrication, and experimental characteristics of a 100-GHz monolithic cascode HEMT oscillator are presented. A cascode pair of InAIAs/InGaAs HEMT’s has been used as the active cell to enhance the negative resistance so that more process tolerance can be achieved. The monolithic circuit oscillates around 100 GHz with an output power of 2 dBm at a drain bias voltage as small as 0.9 V. This is the first demonstration of cascode HEMT oscillators at W-band. © 1994 IEEE

publication date

  • January 1, 1994

Digital Object Identifier (DOI)

start page

  • 135

end page

  • 137

volume

  • 4

issue

  • 5