A D-Band Monolithic Fundamental Oscillator Using InP-Based HEMT’s Article

Kwon, Y, Pavlidis, D, Brock, TL. (1993). A D-Band Monolithic Fundamental Oscillator Using InP-Based HEMT’s . IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 41(12), 2336-2344. 10.1109/22.260726

cited authors

  • Kwon, Y; Pavlidis, D; Brock, TL

authors

abstract

  • The design, analysis, and experimental characteristics of the first fundamental D-band monolithic HEMT oscillator are reported. The circuit is based on a dual feedback topology and uses 0.1 μm pseudomorphic double heterojunction InAlAs/In07Ga0.3As HEMT’s. It includes on-chip bias circuitry and an integrated E-field probe for direct radiation into the waveguide. The circuit was analyzed using both small-signal and large-signal methods, while carefully accounting for the high-frequency effects of the InP-based HEMT’s. An oscillation frequency of 130.7 GHz was measured and the output power level was -7.9 dBm using HEMT’s of small gate periphery (90 pm). The measured power characteristics were compared to the simulation and yielded good agreement. This represents the highest frequency of fundamental signal generation out of monolithic chips using three-terminal devices. © 1993 IEEE

publication date

  • January 1, 1993

published in

Digital Object Identifier (DOI)

start page

  • 2336

end page

  • 2344

volume

  • 41

issue

  • 12