First demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP DHBTs Conference

Zhu, X, Wang, J, Pavlidis, D et al. (2005). First demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP DHBTs . 2005 101-103. 10.1109/MWSYM.2005.1516531

cited authors

  • Zhu, X; Wang, J; Pavlidis, D; Hsu, S

authors

abstract

  • A low-power transimpedance amplifier is presented based on novel InP/GaAsSb/InP DHBT technology. This is the first monolithic circuit demonstration using Sb-based InP DHBTs. Self-biased from a single 2.55 V dc supply, the broadband transimpedance amplifier in shunt-shunt feedback exhibited a 6.0 dB gain, 8.0 GHz bandwidth, 43 dBΩ transimpedance, and a corresponding gain-bandwidth of 1.13 THz-Ω while consuming only 15.3 mW dc power. The single-stage buffer amplifier achieved a good Gain-Bandwidth-Product per dc power figure-of-merit (GBP/Pdc) of 1. 05 GHz/mW. © 2005 IEEE.

publication date

  • December 1, 2005

Digital Object Identifier (DOI)

International Standard Book Number (ISBN) 10

International Standard Book Number (ISBN) 13

start page

  • 101

end page

  • 103

volume

  • 2005