Material related issues and their characterization with a view to III-V heterojunction device optimization Article

Pavlidis, D. (1993). Material related issues and their characterization with a view to III-V heterojunction device optimization . Materials Science & Engineering B: Solid-State Materials for Advanced Technology, 20(1-2), 1-8. 10.1016/0921-5107(93)90386-2

cited authors

  • Pavlidis, D

abstract

  • The impact of various material choices, i.e. InAlAs/InGaAs, AlGaAs/GaAs, GaInP/GaAs on device characteristics is analyzed. Traps located at various regions of the device impact its performance and can be identified by device characterization such as gm, Rds dispersion and low-frequency noise. Reliability characteristics can be related to material modifications under stress, i.e. traps and dopant diffusion and degradation can be minimized by growth optimization. Process induced damage due to dry-etching can be minimized by proper selection of etching conditions. A strong interaction between material and device research is necessary for best results in optimizing III-V technology. © 1993.

authors

publication date

  • June 30, 1993

published in

Digital Object Identifier (DOI)

start page

  • 1

end page

  • 8

volume

  • 20

issue

  • 1-2