Experimental Characteristics and Performance Analysis of Monolithic InP-Based HEMT Mixers at W-Band Article

Kwon, Y, Pavlidis, D, Marsh, P et al. (1993). Experimental Characteristics and Performance Analysis of Monolithic InP-Based HEMT Mixers at W-Band . IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 41(1), 1-8. 10.1109/22.210222

cited authors

  • Kwon, Y; Pavlidis, D; Marsh, P; Ng, GI; Brock, TL

authors

abstract

  • Experimental characteristics of monolithic InAlAs/InGaAs HEMT mixers are presented together with a theoretical analysis. Experiments at W-band show a maximum conversion gain of 0.9 dB with 2 dBm of LO power level. This is the first demonstration of a monolithic HEMT mixer with conversion gain at W-band. The conversion gain dependence on LO power, RF frequency and gate bias is measured and compared with the theoretical predictions. Good agreement between the theory and experiment could be found. © 1993 IEEE

publication date

  • January 1, 1993

published in

Digital Object Identifier (DOI)

start page

  • 1

end page

  • 8

volume

  • 41

issue

  • 1