Thin Solid Films

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Thin Solid Films Journal

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Numerical ellipsometry: Use of parameter sensitivity to guide measurement selection for transparent anisotropic films. 663:116-125. 2018
Comparison of three methods for ellipsometry characterization of thin absorbing films. 644:182-189. 2017
Reactive sputter deposition and annealing of nanometer scale NiO thin films for metal-insulator-metal tunnel junction diodes. 644:23-28. 2017
Formation of sol-gel based Cu₂ZnSnS₄ thin films using ppm-level hydrogen sulfide. 625:122-130. 2017
Numerical ellipsometry: Examination of growing nickel and rhenium thin films using n-k plane analysis and effective numerical substrates. 583:239-244. 2015
Numerical ellipsometry: High accuracy modeling of thin absorbing films in the n-k plane. 562:49-55. 2014
Fluctuation-induced tunneling dominated electrical transport in multi-layered single-walled carbon nanotube films. 519:7987-7991. 2011
Numerical ellipsometry: Advanced analysis of thin absorbing films in the n-k plane. 519:6284-6289. 2011
Thermal stability analysis of thin film Ni-NiOx-Cr tunnel junctions. 518:3367-3372. 2010
Nanoscratch behavior of carbon nanotube reinforced aluminum coatings. 518:1703-1711. 2010
Numerical ellipsometry: Analysis of thin metal layers using n-k plane methods with multiple incidence angles. 518:1411-1414. 2009
Numerical Ellipsometry: Ellipsometer analysis in the n-k plane for growing films on unknown homogeneous, isotropic substrates and unknown, layered substrates. 517:1081-1085. 2008
Numerical ellipsometry: Ellipsometer analysis in the n-k plane for select combinations of metals, semiconductors, and insulators. 517:1063-1071. 2008
Effects of dielectric thickness and contact area on current-voltage characteristics of thin film metal-insulator-metal diodes. 516:2244-2250. 2008
Ellipsometer analysis in the n-k plane. 516:119-127. 2007
Ellipsometer measurements using focused and masked beams. 515:911-916. 2006
Structural analysis of TiO2 films grown using microwave-activated chemical bath deposition. 419:65-68. 2002
Optical properties of nanophase films measured by variable-angle spectroscopic ellipsometry. 408:211-217. 2002
Damage study of ITO under high electric field. 363:240-243. 2000
Interesting optical properties of films composed of very small grains formed from a high-rate nanoparticle beam. 355:513-517. 1999
Extremely fast ellipsometry solutions using cascaded neural networks alone. 332:50-55. 1998
Toward a priori selection of ellipsometry angles and wavelengths using a high performance semantic database. 313:119-123. 1998
Sensitivity of variable angle spectroscopic ellipsometry to isotropic thin film properties. 308:31-37. 1997
An algorithm for analyzing ellipsometric data taken with multiple angles of incidence. 290:51-56. 1996
Comparison of atomic force microscope and Rutherford backscattering spectrometry data of nanometre size zinc islands. 290:312-316. 1996
A novel technique for fabrication of metallic structures on polyimide by selective electroless copper plating using ion implantation. 270:489-492. 1995
Numerical techniques useful in the practice of ellipsometry. 270:78-84. 1995
Recent developments in ionized cluster beam thin film deposition. 270:637-642. 1995
Surface analysis algorithms for scanning probe microscopy. 270:399-405. 1995
ADVANCED IMAGE-PROCESSING IN SCANNING PROBE MICROSCOPY. 253:318-325. 1994
GOLD AND ZINC THIN-FILMS DEPOSITED BY THE IONIZED CLUSTER BEAM TECHNIQUE. 253:402-406. 1994
MODELING OF SURFACE-ROUGHNESS IN VARIABLE-ANGLE SPECTROSCOPIC ELLIPSOMETRY, USING NUMERICAL PROCESSING OF ATOMIC-FORCE MICROSCOPY IMAGES. 253:326-332. 1994
NUMERICAL ELLIPSOMETRY - ENHANCEMENT OF NEW ALGORITHMS FOR REAL-TIME, IN-SITU FILM GROWTH MONITORING. 253:262-268. 1994
SELECTIVE ELECTROLESS COPPER PLATING ON SILICON SEEDED BY COPPER-ION IMPLANTATION. 253:391-394. 1994
REAL-TIME, IN-SITU ELLIPSOMETRY SOLUTIONS USING ARTIFICIAL NEURAL-NETWORK PREPROCESSING. 245:167-173. 1994
DEVELOPMENT OF ARTIFICIAL NEURAL NETWORKS FOR REAL-TIME, INSITU ELLIPSOMETRY DATA REDUCTION. 220:247-253. 1992
FORMATION OF GOLD CLUSTERS IN THE IONIZED CLUSTER BEAM DEPOSITION TECHNIQUE. 193:92-99. 1990
INTEGRATED METAL LANGMUIR SEMICONDUCTOR FIELD-EFFECT TRANSISTORS. 180:217-225. 1989
FORCED DEPOSITION OF POLAR Z-TYPE LANGMUIR-BLODGETT FILMS. 179:319-325. 1989
MOBILE ION DRIFT IN LANGMUIR-BLODGETT FILMS. 179:313-317. 1989
PLANAR SILICON FIELD-EFFECT TRANSISTORS WITH LANGMUIR-BLODGETT GATE INSULATORS. 132:33-39. 1985
LANGMUIR-BLODGETT FILMS AS BARRIER LAYERS IN JOSEPHSON TUNNEL-JUNCTIONS. 99:277-282. 1983
Investigation of distribution of defects and impurities in boron-doped CVD diamond film by cathodoluminescence spectroscopy 1997

International Standard Serial Number (ISSN)

0040-6090

Electronic International Standard Serial Number (EISSN)

1879-2731