Langmuir-Blodgett films as barrier layers in Josephson tunnel junctions Article

Larkins, GL, Thompson, ED, Ortiz, E et al. (1983). Langmuir-Blodgett films as barrier layers in Josephson tunnel junctions . THIN SOLID FILMS, 99(1-3), 277-282. 10.1016/0040-6090(83)90393-0

cited authors

  • Larkins, GL; Thompson, ED; Ortiz, E; Burkhart, CW; Lando, JB

authors

abstract

  • We report the observation of the Josephson current in tunnel diodes in which the barrier is a monolayer of poly(vinyl stearate) deposited by the Langmuir-Blodgett technique. The fabrication of these diodes is described and the resulting current-voltage characteristic is given. A critical current density of 140 A cm-2 was obtained at 4.2 KK, the energy gap of the superconducting electrode was observed, and hysteretic switching behavior was obtained. The characteristic time constant was estimated and was found to be very attractive for very high speed logic applications. © 1983.

publication date

  • January 14, 1983

published in

Digital Object Identifier (DOI)

start page

  • 277

end page

  • 282

volume

  • 99

issue

  • 1-3