IEICE Transactions on Electronics

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IEICE Transactions on Electronics Journal

publication venue for

AIN/GaN metal insulator semiconductor field effect transistor on sapphire substrate. E91-C:994-1000. 2008
Low-temperature grown GaAsSb with sub-picosecond photocarrier lifetime for continuous-wave terahertz measurements. E91-C:1058-1062. 2008
GaN-based gunn diodes: Their frequency and power performance and experimental considerations. E84-C:1462-1469. 2001
DC and high-frequency characteristics of GaN schottky varactors for frequency multiplication 2012
High-performance modulation-doped heterostructure-thermopiles for uncooled infrared image-sensor application 2012
Prospective for gallium nitride-based opticalwaveguide modulators 2012
Dispersion, high-frequency and power characteristics of AIN/GaN metal insulator semiconductor field effect transistors with in-situ MOCVD deposited Si3N4 2010
Improvement of CO sensitivity in GaN-based gas sensors 2006
Strain sensitivity of AlGaN/GaN HEMT structures for sensing applications 2006
A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si 2003
First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs 2003

International Standard Serial Number (ISSN)

0916-8524

Electronic International Standard Serial Number (EISSN)

1745-1353