Semiconductor Science and Technology

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Semiconductor Science and Technology Journal

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Reliable characteristics and stabilization of on-membrane SOI MOSFET-based components heated up to 335 °C. 32. 2017
Formation of conducting nanochannels in diamond-like carbon films. 21:1326-1330. 2006
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures. 18:L9-L11. 2003
Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors. 17:503-509. 2002
Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors. 17:476-479. 2002
Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors. 6:103-107. 1991
High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure metal-organic chemical vapour deposition. 5:278-280. 1990
The first fabrication of n- and p-type Ga0.49In 0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD. 5:274-277. 1990

International Standard Serial Number (ISSN)

0268-1242

Electronic International Standard Serial Number (EISSN)

1361-6641