Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors Article

Rumyantsev, SL, Pala, N, Shur, MS et al. (2002). Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors . 17(5), 476-479. 10.1088/0268-1242/17/5/312

Industry Collaboration International Collaboration

cited authors

  • Rumyantsev, SL; Pala, N; Shur, MS; Gaska, R; Levinshtein, ME; Ivanov, PA; Khan, MA; Simin, G; Hu, X; Yang, J

authors

publication date

  • May 1, 2002

webpage

keywords

  • DEVICES
  • Engineering
  • Engineering, Electrical & Electronic
  • FLUCTUATIONS
  • GAN-METAL-SEMICONDUCTOR
  • HEMTS
  • LOW-FREQUENCY NOISE
  • MOBILITY
  • Materials Science
  • Materials Science, Multidisciplinary
  • N-GAN
  • Physical Sciences
  • Physics
  • Physics, Condensed Matter
  • Science & Technology
  • Technology

Digital Object Identifier (DOI)

publisher

  • IOP PUBLISHING LTD

start page

  • 476

end page

  • 479

volume

  • 17

issue

  • 5