International Journal of High Speed Electronics and Systems

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International Journal of High Speed Electronics and Systems Journal

publication venue for

Current-Driven Terahertz Oscillations in Diamond TeraFET. 33. 2024
Generation-recombination noise in GaN-based devices. 14:175-195. 2004
Macromodel of G4FET Enabling Fast and Reliable SPICE Simulation for Innovative Circuit Applications 2018
Multivariate Regression Polynomial: A Versatile and Efficient Method for DC Modeling of Different Transistors (MOSFET, MESFET, HBT, HEMT and G4FET) 2018
Perimeter Gated Single Photon Avalanche Diodes in Sub-Micron and Deep-Submicron CMOS Processes 2018
Noise characteristics of 340 nm and 280 nm GaN-based light emitting diodes 2004
Hot-phonon limited electron energy relaxation in AlN/GaN 2002

International Standard Serial Number (ISSN)

0129-1564