Noise characteristics of 340 nm and 280 nm GaN-based light emitting diodes Conference

Sawyer, S, Rumyantsev, SL, Pala, N et al. (2004). Noise characteristics of 340 nm and 280 nm GaN-based light emitting diodes . International Journal of High Speed Electronics and Systems, 14(3), 702-707. 10.1142/S0129156404002703

cited authors

  • Sawyer, S; Rumyantsev, SL; Pala, N; Shur, MS; Bilenko, Y; Gaska, R; Kosterin, PV; Salzberg, BM

authors

abstract

  • Low frequency fluctuations in light intensity of 340 nm and 280 nm GaN-based light emitting diodes (LEDs) are compared with noise properties of other commercially available UV and visible wavelength LEDs and halogen lamps. At low frequencies, LEDs can exhibit lower levels of noise than halogen lamps. An LED noise quality factor β is estimated for the UV LEDs. © World Scientific Publishing Company.

publication date

  • September 1, 2004

published in

Digital Object Identifier (DOI)

start page

  • 702

end page

  • 707

volume

  • 14

issue

  • 3