Generation-recombination noise in GaN-based devices
Article
Rumyantsev, SL, Pala, N, Shur, MS et al. (2004). Generation-recombination noise in GaN-based devices
. International Journal of High Speed Electronics and Systems, 14(1), 175-195. 10.1142/S0129156404002296
Rumyantsev, SL, Pala, N, Shur, MS et al. (2004). Generation-recombination noise in GaN-based devices
. International Journal of High Speed Electronics and Systems, 14(1), 175-195. 10.1142/S0129156404002296
AlGaN thin films and Schottky barrier Al0.4Ga0.6N diodes exhibit generation-recombination (GR) noise with activation energies of 0.8 - 1 eV. GR noise in AlGaN/GaN Heterostructure Field Effect transistors (HFETs) corresponds to activation energies in the range from 1-3 meV to 1 eV. No GR noise is observed in thin doped GaN films and GaN MESFETs. GR noise with the largest reported activation energy of 1.6 eV was measured in AlGaN/mGaN/GaN Double Heterostructure Field Effect Transistors (DHFETs). Local levels responsible for the GR noise in HFETs and DHFETs might be located in AlGaN barrier layers.
