Dielectric–electrode interactions in glass and silicon-compatible thin-film (Ba,Sr)TiO3 capacitors
Article
Gandhi, S, Xiang, S, Kumar, M et al. (2017). Dielectric–electrode interactions in glass and silicon-compatible thin-film (Ba,Sr)TiO3 capacitors
. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 28(1), 595-600. 10.1007/s10854-016-5563-5
Gandhi, S, Xiang, S, Kumar, M et al. (2017). Dielectric–electrode interactions in glass and silicon-compatible thin-film (Ba,Sr)TiO3 capacitors
. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 28(1), 595-600. 10.1007/s10854-016-5563-5
This paper investigates the role of electrode–dielectric interactions, and barrier materials on leakage current, breakdown voltage, yield and reliability of thinfilm (Ba,Sr)TiO3 capacitors on silicon and glass substrates. The first part of the paper investigates the electrode–dielectric interactions with sputtered Cu and Ni electrodes to identify the mechanisms that lead to high leakage current and low yield. The second part of the paper presents lanthanum nickel oxide as a viable solution to overcome the problems with sputtered Cu and Ni electrodes. A combination of low leakage current, high yield and capacitance densities was achieved with the oxide electrode systems.
