Doundoulakis, Georgios

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Doundoulakis, Georgios

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Scholarly & Creative Works

selected scholarly works & creative activities

Article
- 2024
  
  Field Emission Properties of Top-Down GaN Nanowires Characterized in Vacuum by a Nanometer-Resolution Piezoelectric Probing System. JOURNAL OF ELECTRONIC MATERIALS. 53:1414-1424.
  Full Text via DOI: 10.1007/s11664-023-10894-w Web of Science: 001143729000002
- 2022
  
  Precessed electron diffraction study of defects and strain in GaN nanowires fabricated by top-down etching. APPLIED PHYSICS LETTERS. 121.
  Full Text via DOI: 10.1063/5.0101908
- 2021
  
  Electrical Characteristics of Vertical GaN Nanowire Vacuum Field Emitter Devices. IEEE TRANSACTIONS ON ELECTRON DEVICES. 68:3034-3039.
  Full Text via DOI: 10.1109/TED.2021.3076031 Web of Science: 000652799800069
- 2020
  
  Transferrable dielectric DBR membranes for versatile GaN-based polariton and VCSEL technology. MICROELECTRONIC ENGINEERING. 228.
  Full Text via DOI: 10.1016/j.mee.2020.111276
- 2020
  
  Correlation of Threading Dislocations with the Electron Concentration and Mobility in InN Heteroepitaxial Layers Grown by MBE. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 9.
  Full Text via DOI: 10.1149/2.0212001JSS
- 2019
  
  Experimental and modeling insight for fin-shaped transistors based on AlN/GaN/AlN double barrier heterostructure. SOLID-STATE ELECTRONICS. 158:1-10.
  Full Text via DOI: 10.1016/j.sse.2019.04.005
- 2019
  
  Nanofabrication of normally-off GaN vertical nanowire MESFETs. NANOTECHNOLOGY. 30.
  Full Text via DOI: 10.1088/1361-6528/ab13d0
- 2018
  
  Multimodal microscopy test standard for scanning microwave, electron, force and optical microscopy
  Full Text via DOI: 10.1007/s12213-018-0108-z
- 2016
  
  Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy. JOURNAL OF APPLIED PHYSICS. 119.
  Full Text via DOI: 10.1063/1.4953594
Conference
- 2019
  
  Bandgap, electrical and structural properties of thick InN (0001) films grown under optimal conditions
  Full Text via DOI: 10.1088/1742-6596/1190/1/012010
- 2017
  
  Test standard for light, electron & microwave microscopy to enable robotic processes
  Full Text via DOI: 10.1109/MARSS.2017.8001907
Other Scholarly Work
- 2021
  
  Electrical Characteristics of Vertical GaN Nanowire Vacuum Field Emitter Devices (vol 68, pg 3034, 2021). IEEE TRANSACTIONS ON ELECTRON DEVICES. 4806-4806.
  Full Text via DOI: 10.1109/TED.2021.3092080 Web of Science: 000686761500106

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