IEEE Transactions on Device and Materials Reliability

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IEEE Transactions on Device and Materials Reliability Journal

publication venue for

Reliability of Through-Package-Vias From via-First Processing With Ultra-Thin Glass. 17:683-691. 2017
Low-frequency noise-based degradation prediction of Al xGa 1-xN/GaN MODFETs. 6:479-485. 2006
Effects of RF and DC stress on AlGaN/GaN MODFETs: A low-frequency noise-based investigation. 5:555-563. 2005

International Standard Serial Number (ISSN)

1530-4388

Electronic International Standard Serial Number (EISSN)

1530-4388
1558-2574