The effect of SiN x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors Article

Huang, Xingjie, Xing, Yanhui, Yu, Guohao et al. (2022). The effect of SiN x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors . 15(7), 10.35848/1882-0786/ac7a90

cited authors

  • Huang, Xingjie; Xing, Yanhui; Yu, Guohao; Tang, Wenxin; Wei, Xing; Song, Liang; Zhang, Xiaodong; Fan, Yaming; Zeng, Zhongming; Cai, Yong; Zhang, Baoshun; Huang, Zengli; Huang, Rong; Han, Jun

authors

publication date

  • July 1, 2022

keywords

  • ENHANCEMENT
  • GAN
  • HEMTS
  • OFF-state breakdown voltage
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Science & Technology
  • SiNx film
  • TECHNOLOGY
  • VOLTAGE
  • gate leakage current
  • p-GaN gate HEMT

Digital Object Identifier (DOI)

publisher

  • IOP Publishing Ltd

volume

  • 15

issue

  • 7