Effective suppression of interface states in recessed-gate MIS-HEMTs by TMAH wet etching Article

Li, Yu, Yu, Guohao, Wang, Heng et al. (2024). Effective suppression of interface states in recessed-gate MIS-HEMTs by TMAH wet etching . Applied Physics Express, 17(1), 10.35848/1882-0786/ad1199

Open Access

cited authors

  • Li, Yu; Yu, Guohao; Wang, Heng; Zhou, Jiaan; Wang, Zheming; Xing, Runxian; Lu, Shaoqian; Yang, An; Zhang, Bingliang; Cai, Yong; Zeng, Zhongming; Zhang, Baoshun

authors

publication date

  • January 1, 2024

published in

keywords

  • GAN
  • GaN MIS-HEMT
  • PLASMA
  • Physical Sciences
  • Physics
  • Physics, Applied
  • SURFACE
  • Science & Technology
  • TMAH
  • interface states
  • the AC-CV characteristics
  • the pulse I-V measurement
  • the shift of threshold voltage

Digital Object Identifier (DOI)

publisher

  • IOP Publishing Ltd

volume

  • 17

issue

  • 1