Enhancement-mode Ga2O3 FETs with an unintentionally doped (001) β-Ga2O3 channel layer grown by metal-organic chemical vapor deposition Article

Li, Botong, Chen, Tiwei, Zhang, Li et al. (2024). Enhancement-mode Ga2O3 FETs with an unintentionally doped (001) β-Ga2O3 channel layer grown by metal-organic chemical vapor deposition . JAPANESE JOURNAL OF APPLIED PHYSICS, 63(7), 10.35848/1347-4065/ad5897

cited authors

  • Li, Botong; Chen, Tiwei; Zhang, Li; Zhang, Xiaodong; Zeng, Chunhong; Hu, Yu; Huang, Zijing; Xu, Kun; Tang, Wenbo; Shi, Wenhua; Cai, Yong; Zen, Zhongming; Zhang, Baoshun

authors

publication date

  • July 1, 2024

published in

keywords

  • EPITAXY
  • FET
  • MOCVD
  • MOSFET
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Science & Technology
  • gallium oxide
  • homoepitaxy

Digital Object Identifier (DOI)

publisher

  • IOP Publishing Ltd

volume

  • 63

issue

  • 7