Understanding hydrogen and nitrogen doping on active defects in amorphous In-Ga-Zn-O thin film transistors Article

Li, Guoli, Abliz, Ablat, Xu, Lei et al. (2018). Understanding hydrogen and nitrogen doping on active defects in amorphous In-Ga-Zn-O thin film transistors . APPLIED PHYSICS LETTERS, 112(25), 10.1063/1.5032169

Open Access International Collaboration

cited authors

  • Li, Guoli; Abliz, Ablat; Xu, Lei; Andre, Nicolas; Liu, Xingqiang; Zeng, Yun; Flandre, Denis; Liao, Lei

authors

publication date

  • June 18, 2018

published in

keywords

  • EXTRACTION
  • PERFORMANCE
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Science & Technology

Digital Object Identifier (DOI)

publisher

  • AMER INST PHYSICS

volume

  • 112

issue

  • 25