Impact of hydrogen dopant incorporation on InGaZnO, ZnO and In2O3 thin film transistors Article

Wang, Huiru, He, Jiawei, Xu, Yongye et al. (2020). Impact of hydrogen dopant incorporation on InGaZnO, ZnO and In2O3 thin film transistors . Physical Chemistry, Chemical Physics - PCCP, 22(3), 1591-1597. 10.1039/c9cp05050g

Open Access International Collaboration

cited authors

  • Wang, Huiru; He, Jiawei; Xu, Yongye; Andre, Nicolas; Zeng, Yun; Flandre, Denis; Liao, Lei; Li, Guoli

authors

publication date

  • January 21, 2020

published in

keywords

  • 1ST-PRINCIPLES
  • Chemistry
  • Chemistry, Physical
  • DEFECTS
  • OXIDE
  • PERFORMANCE
  • Physical Sciences
  • Physics
  • Physics, Atomic, Molecular & Chemical
  • Science & Technology

Digital Object Identifier (DOI)

start page

  • 1591

end page

  • 1597

volume

  • 22

issue

  • 3