Ultralow Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application Article

Alcalde Bessia, Fabricio, Flandre, Denis, Andre, Nicolas et al. (2020). Ultralow Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application . IEEE Transactions on Nuclear Science, 67(10), 2217-2223. 10.1109/TNS.2019.2945040

Open Access International Collaboration

cited authors

  • Alcalde Bessia, Fabricio; Flandre, Denis; Andre, Nicolas; Irazoqui, Julieta; Perez, Martin; Berisso, Mariano Gomez; Lipovetzky, Jose

authors

publication date

  • October 1, 2020

published in

keywords

  • ACCUMULATION-MODE
  • BIAS
  • Current measurement
  • DEPENDENCE
  • DEVICES
  • DOSIMETRY
  • Engineering
  • Engineering, Electrical & Electronic
  • HIGH-TEMPERATURE
  • Ionizing radiation sensors
  • LONG-CHANNEL
  • MOSFETS
  • Nuclear Science & Technology
  • RADIATION
  • Radiation effects
  • Science & Technology
  • Semiconductor device measurement
  • Technology
  • Temperature measurement
  • Threshold voltage
  • Transistors
  • VOLTAGE
  • Voltage measurement
  • silicon on insulator (SOI)
  • silicon radiation detectors

Digital Object Identifier (DOI)

start page

  • 2217

end page

  • 2223

volume

  • 67

issue

  • 10