An Ultra-Thin Ultraviolet Enhanced Backside-Illuminated Single-Photon Avalanche Diode With 650 nm-Thin Silicon Body Based on SOI Technology Article

Alirezaei, Iman Sabri, Andre, Nicolas, Sedki, Amor et al. An Ultra-Thin Ultraviolet Enhanced Backside-Illuminated Single-Photon Avalanche Diode With 650 nm-Thin Silicon Body Based on SOI Technology . IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 28(2), 10.1109/JSTQE.2021.3129274

Open Access

cited authors

  • Alirezaei, Iman Sabri; Andre, Nicolas; Sedki, Amor; Gerard, Pierre; Flandre, Denis

authors

published in

keywords

  • CMOS technology
  • Engineering
  • Engineering, Electrical & Electronic
  • Fill factor (solar cell)
  • Geiger-mode avalanche photodiode (G-APD)
  • Junctions
  • LIDAR
  • Lighting
  • Optics
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Quantum Science & Technology
  • Science & Technology
  • Silicon
  • Single-photon avalanche diodes
  • Space charge
  • Technology
  • Temperature measurement
  • backside-illuminated SPAD
  • flexible SPAD
  • low-level light detection
  • silicon-on insulator (SOI)
  • single photon avalanche diode (SPAD)
  • ultraviolet (UV)-SPAD

Digital Object Identifier (DOI)

publisher

  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

volume

  • 28

issue

  • 2