Transmission electron microscopy and Raman measurements of the misfit stress in a Si tensile strained layer
Article
Cabié, M, Ponchet, A, Rocher, A et al. (2004). Transmission electron microscopy and Raman measurements of the misfit stress in a Si tensile strained layer
. APPLIED PHYSICS LETTERS, 84(6), 870-872. 10.1063/1.1644639
Cabié, M, Ponchet, A, Rocher, A et al. (2004). Transmission electron microscopy and Raman measurements of the misfit stress in a Si tensile strained layer
. APPLIED PHYSICS LETTERS, 84(6), 870-872. 10.1063/1.1644639
The in-plane components of the stress in Si layer grown on a Si0.8Ge0.2 were measured by TEM and Raman scattering. The experimental values, 1.32 GPa and 1.44 GPa determined within an error of 15% and 10%, respectively, are in very good agreement and close to the value calculated with the nominal misfit (1.37 GPa).
