Use of the curvature method to determine the misfit stress of epitaxial semiconducting systems: The case of samples thinned for TEM observation
Proceedings Paper
Ponchet, A, Cabié, M, Durand, L et al. (2003). Use of the curvature method to determine the misfit stress of epitaxial semiconducting systems: The case of samples thinned for TEM observation
. 795 21-26. 10.1557/proc-795-u1.9
Ponchet, A, Cabié, M, Durand, L et al. (2003). Use of the curvature method to determine the misfit stress of epitaxial semiconducting systems: The case of samples thinned for TEM observation
. 795 21-26. 10.1557/proc-795-u1.9
The curvature method which allows to measure the stress in epitaxial layers has been adapted to transmission electron microscopy observations. The samples thinned by the substrate side present some particular mechanical characteristics. The ratio between the substrate thickness and the layer thickness should be taken into account. The experimental conditions allowing a reliable determination of the stress have been established. A finite element calculation has been used to show that the dimensions of the area where the measure is performed can not systematically be neglected. This method has been applied to the semiconducting systems Ga1-xInxAs/GaAs and Ga1-xInxAs/InP.
