Nickel segregation on dislocation loops in implanted silicon Article

Hoummada, K, Mangelinck, D, Gault, B et al. (2011). Nickel segregation on dislocation loops in implanted silicon . SCRIPTA MATERIALIA, 64(5), 378-381. 10.1016/j.scriptamat.2010.10.036

cited authors

  • Hoummada, K; Mangelinck, D; Gault, B; Cabié, M

authors

abstract

  • Segregation of Ni was observed by atom probe tomography at the edges of a pseudo-hexagonal dislocation loop within As+-implanted (0 0 1) Si wafers, after Ni deposition but before heat treatment. Thanks to crystallographic information retained within the atom probe tomography data, the orientation of the loop was determined to be within the {1 1 1} plane and elongated along the <11̄0> direction. The presence of pseudo-hexagonal dislocation loops was confirmed by transmission electron microscopy. Concentrations of more than 10 at.% in Ni were measured at the edges of the loop. © 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

publication date

  • January 1, 2011

published in

Digital Object Identifier (DOI)

start page

  • 378

end page

  • 381

volume

  • 64

issue

  • 5