Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties
Article
Blanc, S, Arnoult, A, Carrère, H et al. (2003). Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties
. 150(1), 64-67. 10.1049/ip-opt:20030039
Blanc, S, Arnoult, A, Carrère, H et al. (2003). Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties
. 150(1), 64-67. 10.1049/ip-opt:20030039
Molecular beam epitaxy of GaAsN/GaAs and GaInAsN/GaAs structures on {111} oriented substrates has been studied. Ga(In)AsN/GaAs thick layers and quantum wells have been grown on (111)A and (111)B GaAs substrates. Nitrogen incorporation has been found to depend on substrate orientation and growth rate. The most promising orientation appears to be the (111)A orientation for GaAsN quantum wells and emission wavelengths up to 1.5 μm have been obtained. For (111)B, a broad emission is systematically observed indicating the presence of defects originating from N incorporation. For (111)A GaInAsN/GaAs quantum wells, the addition of indium leads to a red shift and to a broadening of the emission. It does not have any beneficial effect on (111)B quantum well optical properties.
