A Spatial-LDI Δ-Σ LNA Design in 65nm CMOS Conference

Silva, N, Mandal, S, Belostotski, L et al. (2024). A Spatial-LDI Δ-Σ LNA Design in 65nm CMOS .

cited authors

  • Silva, N; Mandal, S; Belostotski, L; Madanayake, A

abstract

  • Low noise and maximum linearity are critical for aperture array receivers. Receiver sensitivity and resilience to jamming are fundamentally limited by LNA noise figure (NF) and linearity, respectively. This paper describes the preliminary design of a wideband 65 nm CMOS LNA and signal processing circuits for spatial Δ-Σ noise shaping to improve both NF and linearity when used in array apertures. The design exploits the 2D spatiotemporal frequency domain properties of plane-waves for noise and distortion shaping. MATLAB simulations indicate an NF improvement of 3.9 dB over a 5 GHz bandwidth for 20 dB LNA gain and 2× spatial over-sampling. Transistor-level simulation results of the 65 nm CMOS blocks are also provided.

publication date

  • January 1, 2024