Silicon PIN photodiode applied to acquire high-frequency sampling XAFS spectra Article

Liu, YP, Yao, L, Wang, BJ et al. (2022). Silicon PIN photodiode applied to acquire high-frequency sampling XAFS spectra . 33(7), 10.1007/s41365-022-01066-2

cited authors

  • Liu, YP; Yao, L; Wang, BJ; Zhong, JJ; Wang, H; Qian, LX; Chen, ZJ; Mo, G; Xing, XQ; Sheng, WF; Wu, ZH

authors

abstract

  • Experimental techniques based on SR facilities have emerged with the development of synchrotron radiation (SR) sources. Accordingly, detector miniaturization has become significant for the development of SR experimental techniques. In this study, the miniaturization of a detector was achieved by coupling a commercial silicon PIN photodiode (SPPD) into a beamstop, aiming for it not only to acquire X-ray absorption fine structure (XAFS) spectra, but also to protect the subsequent two-dimensional detector from high-brilliance X-ray radiation damage in certain combination techniques. This mini SPPD detector coupled to a beamstop was used as the rear detector in both the conventional sampling scheme and novel high-frequency (HF) sampling scheme to collect the transmission XAFS spectra. Traditional ion chambers were also used to collect the transmission XAFS spectra, which were used as the reference. These XAFS spectra were quantitatively analyzed and compared; the results demonstrated that the XAFS spectra collected by this SPPD in both the conventional sampling scheme and HF sampling scheme are feasible. This study provides a new detector-selection scheme for the acquisition of the quick-scanning XAFS (QXAFS) and HF sampling XAFS spectra. The SPPD detector presented in this study can partially meet the requirements of detector miniaturization.

publication date

  • July 1, 2022

Digital Object Identifier (DOI)

volume

  • 33

issue

  • 7