Low-frequency noise in AlGaN/GaN heterostructure field effect transistors and metal oxide semiconductor reterostructure field effect transistors Article

Rumyantsev, SL, Pala, N, Shur, MS et al. (2001). Low-frequency noise in AlGaN/GaN heterostructure field effect transistors and metal oxide semiconductor reterostructure field effect transistors . 1(4), L221-L226. 10.1142/S0219477501000469

Industry Collaboration International Collaboration

cited authors

  • Rumyantsev, SL; Pala, N; Shur, MS; Levinshtein, ME; Ivanov, PA; Khan, MA; Simin, G; Yang, J; Hu, X; Tarakji, A; Gaska, R

authors

publication date

  • December 1, 2001

webpage

keywords

  • 1/f noise
  • 2DEG concentration
  • AlGaN/GaN
  • HFETs
  • MOSHFETs
  • Mathematics
  • Mathematics, Interdisciplinary Applications
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Science & Technology

Digital Object Identifier (DOI)

publisher

  • WORLD SCIENTIFIC PUBL CO PTE LTD

start page

  • L221

end page

  • L226

volume

  • 1

issue

  • 4