Development of high-K embedded capacitors on printed wiring board using sol-gel and foil-transfer processes Conference

Abothu, IR, Raj, PM, Balaraman, D et al. (2004). Development of high-K embedded capacitors on printed wiring board using sol-gel and foil-transfer processes . 1 514-520.

cited authors

  • Abothu, IR; Raj, PM; Balaraman, D; Govind, V; Bhattacharya, S; Sacks, MD; Swaminathan, M; Lance, MJ; Tummala, RR

abstract

  • The fabrication of high-k embedded capacitors on printed wiring board was analyzed using sol-gel and foil-transfer processes. High-k BaTiO 3 and SrTiO 3 capacitive layers were synthesized using a sol-gel process with barium/strontium 2-ethylhexonate and titanium sopropoxide as precursors. The scattering parameters were measured using an S-parameter Network Analyzer (HP Model 8720 ES), with probes being calibrated using open, short, and matched 50 Ohm structures on an aluminum oxide substrate. It was found that the high permeability of Ni and lower conductivity compared to copper decreased the skin depth and increased the resistivity of copper.

publication date

  • December 28, 2004

start page

  • 514

end page

  • 520

volume

  • 1